Celis Semiconductor has designed a radiation-hardened 1.5 megabit nonvolatile ferroelectric memory that operates at 3 volts. This memory provides for good retention, virtually unlimited endurance, fast write times, and can operate over a -55/spl deg/C to 125/spl deg/C temperature range. This 1.5 megabit memory incorporates twelve 128-kilobit (16K X 8) Strontium Bismuth Tantalate (SBT) ferroelectric memory chips in a one-inch square by approximately .25-inch high multi-chip module. The 128-kilobit ferroelectric chips use a robust two-transistor, two-capacitor memory cell architecture and have a unique addressing scheme to reduce active power requirements and enhance radiation tolerance. The chips are fabricated using radiation-hardened 0.5 micron CMOS underlying circuitry with SBT ferroelectric upper layer processing. This ferroelectric memory provides ideal characteristics necessary for long range deep space missions.


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    Titel :

    Ferroelectric memory technology for aerospace applications


    Beteiligte:
    Philpy, S.C. (Autor:in) / Kamp, D.A. (Autor:in) / DeVilbiss, A.D. (Autor:in) / Isacson, A.F. (Autor:in) / Derbenwick, G.F. (Autor:in)


    Erscheinungsdatum :

    2000-01-01


    Format / Umfang :

    599364 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Ferroelectric Memory Technology for Aerospace Applications

    Philpy, S. C. / Kamp, D. A. / De Vilbiss, A. D. et al. | British Library Conference Proceedings | 2000


    Nonvolatile and SDRAM ferroelectric memories for aerospace applications

    Philpy, S.T. / Kamp, D.A. / Derbenwick, G.F. | IEEE | 2004



    Applications of aerospace technology

    Rouse, D. J. / Brown, J. N., Jr. / Cleland, John et al. | NTRS | 1987


    Applications of aerospace technology

    Rouse, Doris J. | NTRS | 1984