Celis Semiconductor has designed a radiation-hardened 1.5 megabit nonvolatile ferroelectric memory that operates at 3 volts. This memory provides for good retention, virtually unlimited endurance, fast write times, and can operate over a -55/spl deg/C to 125/spl deg/C temperature range. This 1.5 megabit memory incorporates twelve 128-kilobit (16K X 8) Strontium Bismuth Tantalate (SBT) ferroelectric memory chips in a one-inch square by approximately .25-inch high multi-chip module. The 128-kilobit ferroelectric chips use a robust two-transistor, two-capacitor memory cell architecture and have a unique addressing scheme to reduce active power requirements and enhance radiation tolerance. The chips are fabricated using radiation-hardened 0.5 micron CMOS underlying circuitry with SBT ferroelectric upper layer processing. This ferroelectric memory provides ideal characteristics necessary for long range deep space missions.
Ferroelectric memory technology for aerospace applications
2000 IEEE Aerospace Conference. Proceedings (Cat. No.00TH8484) ; 5 ; 377-383 vol.5
2000-01-01
599364 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Ferroelectric Memory Technology for Aerospace Applications
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