This paper deals with the characterization of the differential carrier lifetime and the calculation of the monomolecular, radiative and non-radiative recombination coefficients and their temperature dependence as an evidence of the excellent temperature performance of this material system. The device characterized is a 1.25 /spl mu/m GaInNAs laser structure grown on a GaAs substrate. The active region consists of a single 6 nm thick single quantum well. Light current (L-I) characteristics performed over a temperature range of 20/spl deg/C to 80/spl deg/C, show a characteristic temperature of 50 K. Similar than in the case of commercial InGaAs. Good temperature performance of optical gain using Hakki-Paoli method, lasing wavelength and efficiency will also be presented and compared with modelling work.


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    Titel :

    Experimental study of temperature sensitivity of carrier lifetime and recombination coefficients in GaInNAs SQW lasers


    Beteiligte:
    Pozo, J. (Autor:in) / Ivanov, P. (Autor:in) / Qiu, Y. (Autor:in) / Rorison, J. (Autor:in) / Konttinen, J. (Autor:in) / Saarinen, M. (Autor:in) / Jouhti, T. (Autor:in) / Pessa, M. (Autor:in)


    Erscheinungsdatum :

    2005-01-01


    Format / Umfang :

    242061 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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