An accurate knowledge of carrier concentrations is important for many semiconductor devices. A variety of optical and electrical measurement techniques has been developed. In this paper we discuss and compare different linear reflection measurement techniques to calibrate the electron concentration N in thin n-GaAs layers in the range between 1 and 20 /spl times/ 10/sup 18/ with accuracies down to 1-2 % by exploiting optical plasma resonance effects.


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    Titel :

    Optical calibration of electron concentrations in heavily doped n-GaAs films


    Beteiligte:
    Stiens, J. (Autor:in) / Kotov, V. (Autor:in) / Shkerdin, G. (Autor:in) / Borghs, G. (Autor:in) / Vounckx, R. (Autor:in)


    Erscheinungsdatum :

    2002-01-01


    Format / Umfang :

    260647 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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