This paper presents VCSELs in the InGaAlAs-InP system that have been realized from 1.31 /spl mu/m to 1.8 /spl mu/m enabling the buried tunnel junction technology with particular emphasis on output power, operation temperature and modulation speed at 1.55 /spl mu/m, aiming for 10 Gbit/s transmission.


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    Titel :

    InP-based vertical-cavity surface-emitting lasers with high output power and large modulation bandwidth


    Beteiligte:
    Shau, R. (Autor:in) / Bohm, G. (Autor:in) / Kohler, F. (Autor:in) / Amann, M.-C. (Autor:in)


    Erscheinungsdatum :

    2002-01-01


    Format / Umfang :

    116018 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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