This paper presents VCSELs in the InGaAlAs-InP system that have been realized from 1.31 /spl mu/m to 1.8 /spl mu/m enabling the buried tunnel junction technology with particular emphasis on output power, operation temperature and modulation speed at 1.55 /spl mu/m, aiming for 10 Gbit/s transmission.
InP-based vertical-cavity surface-emitting lasers with high output power and large modulation bandwidth
2002-01-01
116018 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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