We report here the observation of strong room temperature photoluminescence (PL) and junction laser operation (/spl lambda/=1 /spl mu/m) from self-organized InGaAs quantum dots grown by molecular beam epitaxy (MBE) on [001] GaAs substrates.


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    Titel :

    Room temperature luminescence and 1 /spl mu/m junction laser operation of In/sub x/Ga/sub 1-x/As/GaAs quantum boxes formed by self-organized molecular beam


    Beteiligte:
    Phillips, J. (Autor:in) / Kamath, K. (Autor:in) / Sosnowski, T. (Autor:in) / Norris, T. (Autor:in) / Bhattacharya, P. (Autor:in)


    Erscheinungsdatum :

    1996-01-01


    Format / Umfang :

    166928 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




    Room Temperature Operation of MBE Self-Organized InGaAs Quantum Dot Lasers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996


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