We report here the observation of strong room temperature photoluminescence (PL) and junction laser operation (/spl lambda/=1 /spl mu/m) from self-organized InGaAs quantum dots grown by molecular beam epitaxy (MBE) on [001] GaAs substrates.
Room temperature luminescence and 1 /spl mu/m junction laser operation of In/sub x/Ga/sub 1-x/As/GaAs quantum boxes formed by self-organized molecular beam
1996-01-01
166928 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
British Library Conference Proceedings | 1996
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