Nitride-based UV light emitters are recently improved by the progress of crystal growth technologies of AlGaN-based heterostructure. By applying hetero-epitaxial lateral overgrowth (HELO) technique, a high performance UV-LED and a short lasing-wavelength UV-LD have been demonstrated. The UV-LED is also applicable to visible emitters in a combination with wavelength converter. A yellowish white LED with B and N doped SiC substrate was demonstrated.
Recent progress in nitride-based UV light emitters
2005-01-01
167653 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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