Nitride-based UV light emitters are recently improved by the progress of crystal growth technologies of AlGaN-based heterostructure. By applying hetero-epitaxial lateral overgrowth (HELO) technique, a high performance UV-LED and a short lasing-wavelength UV-LD have been demonstrated. The UV-LED is also applicable to visible emitters in a combination with wavelength converter. A yellowish white LED with B and N doped SiC substrate was demonstrated.


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    Titel :

    Recent progress in nitride-based UV light emitters


    Beteiligte:
    Kamiyama, S. (Autor:in) / Iwaya, M. (Autor:in) / Amano, H. (Autor:in) / Akasaki, I. (Autor:in)


    Erscheinungsdatum :

    2005-01-01


    Format / Umfang :

    167653 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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