The 1.3 /spl mu/m InGaP clad laser with AlGaInAs SCH layer was fabricated on a hetero-epitaxial InGaAs QW buffer layer. Due to high optical confinement, this laser showed a high characteristic temperature T/sub 0/ of 110 K.
1.3 /spl mu/m high T/sub 0/ strained MQW laser with AlGaInAs SCH layers on a hetero-epitaxial InGaAs buffer layer
1996-01-01
142963 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
1.3m High T~0 Strained MQW Laser With AlGaInAs SCH Layers on A Hetero-epitaxial InGaAs Buffer Layer
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