The 1.3 /spl mu/m InGaP clad laser with AlGaInAs SCH layer was fabricated on a hetero-epitaxial InGaAs QW buffer layer. Due to high optical confinement, this laser showed a high characteristic temperature T/sub 0/ of 110 K.


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    Titel :

    1.3 /spl mu/m high T/sub 0/ strained MQW laser with AlGaInAs SCH layers on a hetero-epitaxial InGaAs buffer layer


    Beteiligte:
    Kurakake, H. (Autor:in) / Uchida, T. (Autor:in) / Higashi, T. (Autor:in) / Ogita, S. (Autor:in) / Kobayashi, M. (Autor:in)


    Erscheinungsdatum :

    1996-01-01


    Format / Umfang :

    142963 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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