A process developed for fabricating high-quality periodically-inverted GaAs waveguides based on sublattice reversal epitaxy and regrowth technique is presented. By using this process, we can fabricate low-loss GaAs wavelength conversion devices with /spl sim/ 6 /spl mu/m QPM periods.


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    Titel :

    Fabrication of periodically-inverted GaAs for quasi-phase-matching nonlinear optical devices


    Beteiligte:
    Matsushita, T. (Autor:in) / Tachibana, H. (Autor:in) / Koh, S. (Autor:in) / Kondo, T. (Autor:in)


    Erscheinungsdatum :

    2003-01-01


    Format / Umfang :

    88762 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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