InSbN photodiodes prepared by N+ and Mg+ implantation into InSb wafers for long wavelength infrared photodetection are demonstrated for the first time. The detection wavelength can be controlled by monitoring the implanted nitrogen. Such devices are capable of mid- and long-wavelength infrared photodetection and potential candidates for terahertz radiation
INSBN Junction Diode Fabricated by Ion Implantation
2008-12-01
174287 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Photonic components fabricated using ion implantation [4078-46]
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