We present selectively grown Ge p-i-n photodetectors coupled to high index contrast Si(core)/SiO2(cladding) waveguides on a silicon-on-insulator (SOI) platform. Two coupling schemes, namely butt-coupling and vertical coupling, were demonstrated in this study. With the butt-coupling scheme we have achieved a high responsivity of 1.0 A/W at 1520 nm and a 3dB bandwidth greater than 4.5 GHz at 1550 nm. With the vertical coupling scheme, where the light couples from a Si waveguide evanescently to the Ge detector on top of it, a responsivity of 0.22A/W and a 3dB bandwidth of ~1.5 GHz have been demonstrated at 1550 nm. The devices were fabricated on a standard 180 nm industrial complementary metal oxide semiconductor production (CMOS) line, and can be integrated with CMOS circuitry for electronic and photonic integrated circuits.


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    Titel :

    Waveguide Integrated Ge p-i-n Photodetectors on a Silicon-on-Insulator Platform


    Beteiligte:
    Liu, J.f. (Autor:in) / Ahn, D. (Autor:in) / Hong, C. (Autor:in) / Pan, D. (Autor:in) / Jongthammanurak, S. (Autor:in) / Beals, M. (Autor:in) / Kimerling, L. (Autor:in) / Michel, J. (Autor:in) / Pomerene, A. (Autor:in) / Carothers, D. (Autor:in)


    Erscheinungsdatum :

    2006-11-01


    Format / Umfang :

    3677542 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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