We report on the lasing properties of SC 5-layered Q-wire lasers with wire width of 23 nm. The spontaneous emission efficiency below the threshold was almost comparable to that of the Q-film lasers up to 85 C, that revealed low-damage property of the etched/regrown interfaces.


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    Titel :

    1.5 /spl mu/m wavelength GaInAsP/InP 5-layered quantum-wire lasers fabricated by CH/sub 4//H/sub 2/ dry etching and regrowth


    Beteiligte:
    Midorikawa, H. (Autor:in) / Muranushi, K. (Autor:in) / Nunoya, N. (Autor:in) / Sano, T. (Autor:in) / Tamura, S. (Autor:in) / Arai, S. (Autor:in)


    Erscheinungsdatum :

    2001-01-01


    Format / Umfang :

    223705 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch





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