High-brightness high-power laser diodes are gaining importance in a wide variety of applications. For direct use as a replacement for solid-state lasers in particular, laser diodes with high output power and good beam quality are necessary. Recently, we presented the realization of a new resonator concept for high brightness laser diodes, the so-called "Z-laser" (Rogg et al, Proc. SPIE vol. 4287, pp. 195-201, 2001). In this paper, we present data on the optimization of the internal reflecting boundaries of these devices.


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    Titel :

    Etch-depth dependence of laser diodes using angular filtering by total reflection


    Beteiligte:
    Rogg, J. (Autor:in) / Boucke, K. (Autor:in) / Kelemen, M.T. (Autor:in) / Rinner, F. (Autor:in) / Pletschen, W. (Autor:in) / Kiefer, R. (Autor:in) / Walther, M. (Autor:in) / Mikulla, M. (Autor:in) / Poprawe, R. (Autor:in) / Weimann, G. (Autor:in)


    Erscheinungsdatum :

    2001-01-01


    Format / Umfang :

    186639 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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