Summary form only given. We report here GaAs-based low, power phototransceivers and phototransceiver arrays with vertically integrated resonant cavity LEDs (RCLEDs) and heterojunction phototransistors (HPTs). A novel integration scheme, based on a tunnel junction (TJ) ensures the simple processing, compact size and excellent performance of the arrays.
Phototransceiver arrays with phototransistors and resonant cavity light emitting diodes vertically integrated with tunnel junctions
2001-01-01
179184 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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