Summary form only given. We have fabricated top-emitting VCSELs grown by solid source MBE. Emission wavelength is about 990nm. The optimized p-type Be modulation doped Bragg-reflector consists of 24 pairs of quarter wavelength thick AlGaAs-GaAs layers, the n-Bragg-reflector is built of 30 pairs of AlAs-GaAs layers. The 3 active InGaAs quantum wells are embeded in GaAs barriers. Lateral current confinement is achieved by selective oxidation of a single 30 nm thick AlAs layer just above the active layers.


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    Titel :

    High power top-surface emitting vertical-cavity lasers


    Beteiligte:
    Grabherr, M. (Autor:in) / Weigl, B. (Autor:in) / Reiner, G. (Autor:in) / Miller, M. (Autor:in) / Ebeling, K.J. (Autor:in)


    Erscheinungsdatum :

    1996-01-01


    Format / Umfang :

    238861 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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