Summary form only given. We have fabricated top-emitting VCSELs grown by solid source MBE. Emission wavelength is about 990nm. The optimized p-type Be modulation doped Bragg-reflector consists of 24 pairs of quarter wavelength thick AlGaAs-GaAs layers, the n-Bragg-reflector is built of 30 pairs of AlAs-GaAs layers. The 3 active InGaAs quantum wells are embeded in GaAs barriers. Lateral current confinement is achieved by selective oxidation of a single 30 nm thick AlAs layer just above the active layers.
High power top-surface emitting vertical-cavity lasers
1996-01-01
238861 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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