We present the first microchip vertical external-cavity surface-emitting semiconductor laser operating at 1.3 /spl mu/m. Continuous-wave power >180 mW was achieved from a cavity volume /spl sim/0.001 mm/sup 3/ using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated diamond heatspreader.
A diamond-microchip GaInNAs VECSEL operating at 1315 nm
2004-01-01
109276 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
A Diamond-Microchip GaInNAs VECSEL Operating at 1315nm
British Library Conference Proceedings | 2004
|British Library Conference Proceedings | 2005
|IEEE | 2005
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