Summary form only given. Ultrafast all-optical switches will be of great importance to our future's high-bit-rate optical communication systems. We have previously reported a surface-reflection type ultrafast all-optical switch with a response time of 250 fs. The device is basically a saturable absorber that relies on a carrier-induced change in the excitonic absorption of InGaAs/InAlAs MQWs. To achieve ultrafast operation MQWs were grown at a low-temperature of 200/spl deg/C and were doped with Be. Furthermore, large optical nonlinearity was achieved by introducing compressive strain into the MQWs, adopting reflection geometry and using a DBR with 1% reflectivity. We describe here successfully enhanced on/off ratios of the device by using spin polarization.


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    Titel :

    Ultrafast, high-contrast, polarization-insensitive all-optical switch by using spin-polarization in low-temperature-grown MQWs


    Beteiligte:
    Takahashi, R. (Autor:in) / Itoh, H. (Autor:in) / Iwamura, H. (Autor:in)


    Erscheinungsdatum :

    1999-01-01


    Format / Umfang :

    287163 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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