Frequency mixing characteristics are examined for GaInAs/InAlAs triple-barrier resonant tunneling diodes operating at room temperature in 100 GHz band. To reduce the capacitance, the diameter is made as small as 0.8 /spl mu/m. When the bias voltage is set in the negative differential conductance region, clear heterodyne signals can be obtained.


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    Titel :

    Frequency mixing characteristics of room-temperature triple-barrier resonant tunneling diodes in 100 GHz band


    Beteiligte:
    Hori, T. (Autor:in) / Ozono, T. (Autor:in) / Orihashi, N. (Autor:in) / Asada, M. (Autor:in)


    Erscheinungsdatum :

    2004-01-01


    Format / Umfang :

    124755 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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