High-power 630-nm-band AIGalnP laser diodes with strain-compensated single quantum well active layer
1997-01-01
289737 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Self-pulsating 630-nm Band Strain-compensated MQW AlGaInP Laser Diodes
British Library Conference Proceedings | 1995
|AlGaInP single quantum well laser diodes
SPIE | 1995
|Band structures and characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers
British Library Online Contents | 2001
|Band structures and characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers
British Library Online Contents | 2001
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