We have demonstrated a UV-laser diode with a lasing wavelength of 350.9 nm, which was grown on low-dislocation-density AlGaN template. The lasing operation under pulsed injection was achieved with the threshold current of about 200 mA.


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    Titel :

    UV laser diode with 350.9 nm-lasing wavelength grown on AlGaN template


    Beteiligte:
    Kamiyama, S. (Autor:in) / Iida, K. (Autor:in) / Kawashima, T. (Autor:in) / Kasugai, H. (Autor:in) / Mishima, S. (Autor:in) / Honshio, A. (Autor:in) / Miyake, Y. (Autor:in) / Iwaya, M. (Autor:in) / Amano, H. (Autor:in) / Akasaki, I. (Autor:in)


    Erscheinungsdatum :

    2004-01-01


    Format / Umfang :

    134055 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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