In this paper, argon ion laser of 514.5 nm, is used for interference lithography. Two mutually coherent laser beams intersect at the surface of a coated substrate, creating a sinusoidal intensity profile. This is then transferred into the holographic film, creating a line and space pattern with spatial period, /spl Lambda/ = /spl lambda//2sin/spl theta/, where /spl theta/ = 40 /spl deg/ thus, /spl Lambda/ = 400 nm.


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    Titel :

    Nano-patterning by laser interference lithography


    Beteiligte:
    Xie, Q. (Autor:in) / Hong, M.H. (Autor:in) / Van, L.H. (Autor:in) / Chong, T.C. (Autor:in)


    Erscheinungsdatum :

    2003-01-01


    Format / Umfang :

    53269 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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