We report on 630 nm-band AIGalnP strained MQW laser diodes incorporating an MQB. The laser offer high-temperature operation over 60/spl deg/C and have been operating reliably for more than 1,000 h under 3 mW at 45/spl deg/C.


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    Titel :

    630 nm-band AlGaInP strained MQW laser diodes with an MQB grown on misoriented substrates


    Beteiligte:
    Hiroyama, R. (Autor:in) / Hamada, H. (Autor:in) / Shono, M. (Autor:in) / Honda, S. (Autor:in) / Yodoshi, K. (Autor:in) / Yamaguchi, T. (Autor:in)


    Erscheinungsdatum :

    1992-01-01


    Format / Umfang :

    130664 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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