We report on 630 nm-band AIGalnP strained MQW laser diodes incorporating an MQB. The laser offer high-temperature operation over 60/spl deg/C and have been operating reliably for more than 1,000 h under 3 mW at 45/spl deg/C.
630 nm-band AlGaInP strained MQW laser diodes with an MQB grown on misoriented substrates
1992-01-01
130664 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
630 nm-Band AlGaInP Strained MQW Laser Diodes with an MQB Grown on Misoriented Substrates
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