Summary form only given. The semiconductor optical amplifier (SOA) has many potential applications in future all-optical transmission systems. Four wave mixing (FWM) in SOA has been proposed as a technique for performing wavelength conversion due to its high conversion efficiency and fast speed response in wavelength division multiplexing (WDM). A two-section SOA has been developed to increase its gain performance while facilitating the heat dissipation in the chip. The two sections are joined by a passive waveguide region. The amplifier wafer was grown by MOCVD (metal organic chemical vapor deposition) growth process on a [100] oriented InP substrate using two growth steps.


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    Titel :

    Four wave mixing in semiconductor optical amplifier


    Beteiligte:
    Wu, C. (Autor:in) / Fan, H. (Autor:in) / Dutta, N.K. (Autor:in) / Koren, U. (Autor:in) / Chen, C.H. (Autor:in) / Piccirilli, A.B. (Autor:in)


    Erscheinungsdatum :

    1999-01-01


    Format / Umfang :

    324709 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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