Integrated circuits based on metamorphic InAlAs/InGaAs HEMTs with 70 nm gate length on 4" GaAs substrates for millimeter-wave applications are discussed in this paper. Extrinsic cut-off frequencies of f/sub t/=293 GHz and f/sub max/=337 GHz were achieved. The IC process features high yield on transistor and circuit levels. Single-stage low-noise amplifiers demonstrate a small signal gain of 12 dB and a noise figure of 2.2 dB at 94 GHz. An amplifier MMIC developed for G-band operation exhibits a gain of 19 dB at 200 GHz. These results are equivalent to those achieved using state-of-the-art InP-based HEMT technologies.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Millimeter-wave circuits based on advanced metamorphic HEMT technology


    Beteiligte:
    Tessmann, A. (Autor:in) / Leuther, A. (Autor:in) / Schworer, C. (Autor:in) / Massler, H. (Autor:in) / Reinert, W. (Autor:in) / Walther, M. (Autor:in) / Losch, R. (Autor:in) / Schlechtweg, M. (Autor:in)


    Erscheinungsdatum :

    2004-01-01


    Format / Umfang :

    173875 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Millimeter-Wave Optoelectronic Mixers based on InP HEMT

    Lasers and Electro-optics Society (Institute of Electrical and Electronics Engineers) | British Library Conference Proceedings | 2004


    Millimeter-wave optoelectronic mixers based on InP HEMT

    Chang-Soon Choi, / Woo-Young Choi, | IEEE | 2004


    Advanced millimeter-wave transponder

    KITAZUME, SUSUMU / TAKANO, EIJI | AIAA | 1992


    A 50-nm gate-length metamorphic HEMT technology optimized for cryogenic ultra-low-noise operation

    Heinz, Felix / Thome, Fabian / Leuther, Arnulf et al. | BASE | 2021

    Freier Zugriff