We report the first demonstration of CW operation of GaAsP/GaAs/GaAsSb QW lasers above room temperatures and show that the strain compensation improves the overall device performance.


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    Titel :

    Above room temperature CW edge-emitting lasers with GaAsP/GaAs/GaAsSb active regions


    Beteiligte:
    Yu, S.-Q. (Autor:in) / Jin, X. (Autor:in) / Cao, Y. (Autor:in) / Ding, D. (Autor:in) / Wang, J.-B. (Autor:in) / Johnson, S.R. (Autor:in) / Zhang, Y.-H. (Autor:in) / Dowd, P. (Autor:in) / Adamcyk, M. (Autor:in) / Chaparro, S.A. (Autor:in)


    Erscheinungsdatum :

    2004-01-01


    Format / Umfang :

    125298 byte



    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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