Buried, stacked planar and channel waveguides in sapphire and Ti:sapphire are fabricated by proton implantation. Flexibility of the fabrication technique and good control over the implantation parameters result in variable design and excellent light confinement.


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    Titel :

    Buried planar and channel waveguides in sapphire and Ti:sapphire by proton implantation


    Beteiligte:
    Laversenne, L. (Autor:in) / Hoffmann, P. (Autor:in) / Pollnau, M. (Autor:in) / Moretti, P. (Autor:in)


    Erscheinungsdatum :

    2004-01-01


    Format / Umfang :

    244145 byte



    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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