We report measurements of Raman scattering from silicon-on-insulator (SOI) waveguides in the 1.5 /spl mu/m region. The value of two-photon absorption at 1.5 /spl mu/m suggests that TPA should not hinder the realization of a silicon Raman amplifier or laser.
Raman emission in silicon waveguides: prospects for a silicon amplifier and laser
2003-01-01
145355 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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