We report measurements of Raman scattering from silicon-on-insulator (SOI) waveguides in the 1.5 /spl mu/m region. The value of two-photon absorption at 1.5 /spl mu/m suggests that TPA should not hinder the realization of a silicon Raman amplifier or laser.


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    Titel :

    Raman emission in silicon waveguides: prospects for a silicon amplifier and laser


    Beteiligte:
    Claps, R. (Autor:in) / Raghunathan, V. (Autor:in) / Dimitropoulos, D. (Autor:in) / Jalali, B. (Autor:in)


    Erscheinungsdatum :

    2003-01-01


    Format / Umfang :

    145355 byte



    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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