The fabrication procedure of transparent and conducting ZnO films yielding ohmic contacts to p-GaN has been developed. The microstructure and electronic properties of p-GaN/ZnO interface were studied using atomic force and electron transmission microscopies, and X-ray photoelectron spectrometry. The observed ohmic behaviour is explained in terms of formation of a tunnelling p-GaN/ n/sup +/-ZnO junction.


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    Titel :

    Zinc oxide as a contact material for p-GaN


    Beteiligte:
    Kaminska, E. (Autor:in) / Piotrowska, A. (Autor:in) / Barcz, A. (Autor:in) / Golaszewska, K. (Autor:in) / Kuchuk, A. (Autor:in) / Szade, J. (Autor:in) / Winiarski, A. (Autor:in) / Wawro, A. (Autor:in) / Jasinski, J. (Autor:in) / Liliental-Weber, Z. (Autor:in)


    Erscheinungsdatum :

    2002-01-01


    Format / Umfang :

    421135 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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