For extremely high bit rate data transmission, laser sources with dynamically stable linearly polarized single-mode light output are desirable. We have fabricated oxidized VCSELs with elliptical current aperture for stable linearly polarized single-mode light emission and investigated their RF-behavior. The InGaAs-QW VCSEL structure is grown on <100> GaAs substrate. S-parameter and spectral relative intensity noise measurement give consistent results and yield both a K-factor of 0.468 ns equivalent to 19 GHz intrinsic modulation bandwidth.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    High frequency behavior of oxidized single-mode single polarization VCSELs with elliptical current aperture


    Beteiligte:
    Fiedler, U. (Autor:in) / Wiedenmann, D. (Autor:in) / Weigl, B. (Autor:in) / Jung, C. (Autor:in) / Reiner, G. (Autor:in) / Buck, M. (Autor:in) / Ebeling, K.J. (Autor:in)


    Erscheinungsdatum :

    1996-01-01


    Format / Umfang :

    173204 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    High Frequency Behavior of Oxidized Single-Mode Single Polarization VCSELs with Elliptical Current Aperture

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996



    Selectively oxidized VCSELs go single-mode

    Choquette, K. D. | British Library Online Contents | 2000


    Polarization behavior and mode structure of elliptical surface relief VCSELs

    Camarena, M. / Verschaffelt, G. / Moreno, M.-C. et al. | IEEE | 2003


    Polarization behavior and mode structure of elliptical surface relief VCSELs

    Camarena, M. / Verschaffelt, G. / Moreno, M. et al. | IEEE | 2003