For extremely high bit rate data transmission, laser sources with dynamically stable linearly polarized single-mode light output are desirable. We have fabricated oxidized VCSELs with elliptical current aperture for stable linearly polarized single-mode light emission and investigated their RF-behavior. The InGaAs-QW VCSEL structure is grown on <100> GaAs substrate. S-parameter and spectral relative intensity noise measurement give consistent results and yield both a K-factor of 0.468 ns equivalent to 19 GHz intrinsic modulation bandwidth.
High frequency behavior of oxidized single-mode single polarization VCSELs with elliptical current aperture
1996-01-01
173204 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
British Library Conference Proceedings | 1996
|Selectively oxidized VCSELs go single-mode
British Library Online Contents | 2000
|