In this study, we experimentally demonstrate that, by using the injection locking method, a modulation bandwidth of 35 GHz that is free from electrical parasitic effects is achieved in 1.3-/spl mu/m DFB lasers. In this experimental the output of the master laser is used to injection lock the slave laser, and that of the slave laser is sent to a detection system to measure optical and power spectra. Power spectra are obtained by using a photodiode and by displaying the signal on a microwave spectrum analyzer. Optical spectra are taken by using a scanning Fabry-Perot interferometer. At bias current level, the intrinsic parameters of the slave laser are experimentally determined by using the four-wave mixing method. The enhancement in the modulation bandwidth is more than two folds.


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    Titel :

    35-GHz modulation bandwidth in injection-locked semiconductor lasers


    Beteiligte:
    Hwang, S.K. (Autor:in) / Liu, J.M. (Autor:in) / White, J.K. (Autor:in)


    Erscheinungsdatum :

    2003-01-01


    Format / Umfang :

    130930 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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