In this paper, we use the high rate recombination process in GaInAsNSb quantum well alloys to grow monolithic saturable absorber structures on GaAs substrate for ultrafast optical switching.
Novel ultrafast saturable-absorber device with controlled recombination rate based on GalnAsNSb quantum wells
2005-01-01
792206 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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