Several high-voltage silicon carbide (SiC) devices have been demonstrated over the past few years, and the latest-generation devices are showing even faster switching, and greater current densities. However, there are no commercial gate drivers that are suitable for these high-voltage, high-speed devices. Consequently, there has been a great research effort into the development of gate drivers for high-voltage SiC transistors. This work presents the first detailed report on the design and testing of a high-power-density, high-speed, and high-noise-immunity gate drive for a high-current, 10 kV SiC MOSFET module.


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    Titel :

    A high-power-density, high-speed gate driver for a 10 kV SiC MOSFET module


    Beteiligte:
    DiMarino, C. (Autor:in) / Wang, J. (Autor:in) / Burgos, R. (Autor:in) / Boroyevich, D. (Autor:in)


    Erscheinungsdatum :

    2017-08-01


    Format / Umfang :

    3334039 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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