High power InGaAs-InGaAsP-InP quantum-well lasers operating at 1.9-/spl mu/m are fabricated and evaluated. Eight 2-stripe array lasers are stacked to achieve 8 W CW output power with a maximum power efficiency of 11.2% at 5 W operation.


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    Titel :

    Japanese CELRAP laser fabrication: high power, strained InGaAs-InGaAsP-InP quantum-well lasers emitting at 1.9-/spl mu/m


    Beteiligte:
    Ota, K. (Autor:in) / Kobayashi, K. (Autor:in) / Komatsu, K. (Autor:in) / Saito, H. (Autor:in)


    Erscheinungsdatum :

    2001-01-01


    Format / Umfang :

    150981 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Japanese CELRAP Laser Fabrication: High Power, Strained InGaAs-InGaAsP-InP Quantum-Well Lasers Emitting at 1.9-mum

    Ota, K. / Kobayashi, K. / Komatsu, K. et al. | British Library Conference Proceedings | 2001


    Characteristic analysis of InGaAs/InGaAsP strained quantum well lasers

    Ma, C. / Han, C. / Liu, S. | British Library Online Contents | 1997


    Auger recombination in strained and unstrained InGaAs/InGaAsP multiple quantum well lasers

    Fuchs, G. / Schiedel, C. / Hangleiter, A. et al. | IEEE | 1992


    Auger Recombination in Strained and Unstrained InGaAs/InGaAsP Multiple Quantum Well Lasers

    Fuchs, G. / Schiedel, C. / Hangleiter, A. et al. | British Library Conference Proceedings | 1992


    High-speed operation of strained InGaAs/InGaAsP MQW lasers

    Odagawa, T. / Nakajima, K. / Tanaka, K. et al. | IEEE | 1992