Parasitic inductances of IGBT power modules have a major influence in device operation and circuit performance. They often incur negative effects such as switching oscillations, EMI, extra power losses and stress on the devices. This paper proposes a technique to extract parasitic inductances of IGBT power modules based on two-port scattering (S) parameter measurement. Accurate values of the internal parasitic inductances can be obtained through a step by step analysis using the measured S-parameters. The new approach is experimentally validated with a case study of a commercial 600V IGBT half-bridge power module.


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    Titel :

    Extracting parasitic inductances of IGBT power modules with two-port S-parameter measurement


    Beteiligte:
    Liu, Tianjiao (Autor:in) / Yanjun Feng, (Autor:in) / Ning, Runtao (Autor:in) / Wong, Thomas T. Y. (Autor:in) / Shen, Z. John (Autor:in)


    Erscheinungsdatum :

    2017-06-01


    Format / Umfang :

    1324790 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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