Annular substrates ( 20 ) are stacked in an enclosure where they define an inside volume ( 24 ) and an outer volume ( 26 ) outside the stack. A gas containing at least one precursor of a matrix material to be deposited within the pores of the substrates is channeled inside the enclosure to a first one ( 24 ) of the two volumes, and a residual gas is extracted from the enclosure from the other one ( 26 ) of the volumes. One or more leakage passages ( 22 ) allow the volumes to communicate with each other, other than through the substrates. The total section of the leakage passages has a value lying between a minimum value for ensuring that a maximum gas pressure in the first volume is not exceeded until the end of densification, and a maximum value such that a pressure difference is indeed established between the two volumes from the beginning of densification.


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    Titel :

    PROCEDE POUR LA DENSIFICATION PAR INFILTRATION CHIMIQUE EN PHASE VAPEUR DE SUBSTRATS POREUX AYANT UN PASSAGE CENTRAL


    Weitere Titelangaben:

    CHEMICAL VAPOUR INFILTRATION METHOD FOR DENSIFYING POROUS SUBSTRATES HAVING A CENTRAL PASSAGE
    VERFAHREN ZUR VERDICHTUNG PORÖSER SUBSTRATE, MIT EINEM ZENTRALEN DURCHGANG, MITTELS CHEMISCHER DAMPFINFILTRATION


    Beteiligte:

    Erscheinungsdatum :

    2019-12-04


    Medientyp :

    Patent


    Format :

    Elektronische Ressource


    Sprache :

    Französisch


    Klassifikation :

    IPC:    B64C AEROPLANES , Flugzeuge / C04B Kalk , LIME / C23C Beschichten metallischer Werkstoffe , COATING METALLIC MATERIAL / F02K JET-PROPULSION PLANTS , Strahltriebwerke




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