The invention relates to the technical field of coating preparation, and particularly discloses a coating as well as a preparation method, a product and application thereof. The coating is prepared by adopting chemical vapor deposition, and the chemical vapor deposition conditions are as follows: the heating temperature is 1095-1105 DEG C, the pressure is 1500-2500Pa, the composite gas is a carbon source precursor and nitrogen, and the residence time of the composite gas is 7-12s. The loss W% of the coating at 2000 DEG C for 100 h is smaller than or equal to 3.81%, the mass ablation rate Rm of the coating at 3000 DEG C for 20 s is smaller than or equal to 5.0 mg/s, the oxidation resistance and ablation resistance of a matrix can be improved, and the problems of crusting and carbon black are avoided. The coating prepared by the invention is mainly applied to a photovoltaic thermal field component and a thermal shielding component, so that the oxidation resistance and ablation resistance of the photovoltaic thermal field component and the thermal shielding component are improved, and the service life of the photovoltaic thermal field component and the thermal shielding component is further prolonged.

    本申请涉及涂层制备的技术领域,具体公开了一种涂层及其制备方法,制品、应用。所述涂层是采用化学气相沉积制得,化学气相沉积的条件:加热温度为1095‑1105℃,压力为1500‑2500Pa,复合气体为碳源前驱体和氮气,所述复合气体的滞留时间为7s‑12s。涂层在2000℃下100h的损失量△W%≤3.81%,在3000℃下20s的质量烧蚀率Rm≤5.0mg/s,能够提高基体的抗氧化性和抗烧蚀性,且不产生结壳、炭黑问题。本申请制备的涂层主要应用于光伏热场部件和热屏蔽部件中,以提高光伏热场部件和热屏蔽部件的抗氧化性和抗烧蚀性,进而延长光伏热场部件和热屏蔽部件的使用寿命。


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    Titel :

    Coating as well as preparation method, product and application thereof


    Weitere Titelangaben:

    一种涂层及其制备方法,制品、应用


    Beteiligte:
    CHUAI YANMING (Autor:in) / CHEN XIAOWEI (Autor:in) / LIU JIE (Autor:in) / WEI SHIJIN (Autor:in)

    Erscheinungsdatum :

    2023-06-06


    Medientyp :

    Patent


    Format :

    Elektronische Ressource


    Sprache :

    Chinesisch


    Klassifikation :

    IPC:    C23C Beschichten metallischer Werkstoffe , COATING METALLIC MATERIAL / B64C AEROPLANES , Flugzeuge / C30B SINGLE-CRYSTAL GROWTH , Züchten von Einkristallen



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