Direct band gap InxGa1−xAs/Ge type II strained quantum wells for short-wave infrared p–i–n photodetector
Optical materials ; 46 ; 472-480
2015-01-01
9 pages
Aufsatz (Zeitschrift)
Unbekannt
DDC: | 535 |
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2015
|Normal Incidence P-Type InGaAs/InGaAlAs Strained Quantum Well Infrared Photodetector
British Library Conference Proceedings | 1995
|Normal Incidence N-Type Direct Gap Quantum Well Infrared Photodetector
British Library Conference Proceedings | 1997
|British Library Conference Proceedings | 1995
|