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    Titel :

    Multilayer structures based on variable-gap semiconductors: carrier redistribution phenomena during current transfer [3890-52]



    Kongress:

    International conference; 4th, Material science and material properties for infrared optoelectronics ; 1998 ; Kiev



    Erscheinungsdatum :

    1999-01-01


    Format / Umfang :

    6 pages




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




    Nr. 3890

    DataCite | 1920


    Interaction of I-YI group semiconductors with metals [3890-77]

    Tomashik, V. N. / Seritsan, O. V. / Grytsiv, V. I. et al. | British Library Conference Proceedings | 1999


    New pyroactive structures for infrared optoelectronics [3890-09]

    Blonskiy, I. V. / Kosorotov, V. F. / Shchedrina, L. V. et al. | British Library Conference Proceedings | 1999


    Superluminal transfer of information in electrodynamics [3890-50]

    Oleinik, V. P. / National Academy of Sciences of Ukraine; Institute of Semiconductor Physics | British Library Conference Proceedings | 1999


    Pinning of the Fermi level in A^2B^6 semiconductors [3890-56]

    Babentsov, V. N. / National Academy of Sciences of Ukraine; Institute of Semiconductor Physics | British Library Conference Proceedings | 1999