Characterization of diffusion length of minority carriers in (CdZn)Te at temperatures of 80 to 300 K [3890-27]
International conference; 4th, Material science and material properties for infrared optoelectronics ; 1998 ; Kiev
1999-01-01
7 pages
Aufsatz (Konferenz)
Englisch
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DataCite | 1920
Doping effect on concentration dependence of the diffusion coefficient in semiconductors [3890-48]
British Library Conference Proceedings | 1999
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