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    Titel :

    Isothermal vapor phase epitaxy and rf sputtering for band gap engineered HgCdTe [3179-44]



    Kongress:

    Symposium; 12th, Solid state crystals: materials science and applications: Solid state crystals in opteolectronics and semiconductor technology ; 1996 ; Zakopane; Poland



    Erscheinungsdatum :

    1996-01-01


    Format / Umfang :

    5 pages


    Anmerkungen:

    Also known as SSCs'96




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




    Isotype heterojunction in HgCdTe photodiodes [3179-41]

    Rutkowski, J. / Jozwikowska, A. / Military University of Technology, Warsaw; Institute of Applied Physics | British Library Conference Proceedings | 1996


    InAsSb heterojunction photodiodes grown by liquid phase epitaxy [3179-43]

    Rutkowski, J. / Raczynska, J. / Rogalski, A. et al. | British Library Conference Proceedings | 1996


    Nr. 3179

    DataCite | 1906


    HgCdTe focal plane arrays for high-performance infrared cameras (Invited Paper) [3179-38]

    Kozlowski, L. J. / Military University of Technology, Warsaw; Institute of Applied Physics | British Library Conference Proceedings | 1996


    Photoluminescence of GaAs grown by liquid phase epitaxy from Bi solution [3179-21]

    Ciorga, M. / Bryja, L. / Misiewicz, J. et al. | British Library Conference Proceedings | 1996