Isothermal vapor phase epitaxy and rf sputtering for band gap engineered HgCdTe [3179-44]
Symposium; 12th, Solid state crystals: materials science and applications: Solid state crystals in opteolectronics and semiconductor technology ; 1996 ; Zakopane; Poland
Solid state crystals: materials science and applications: Solid state crystals in opteolectronics and semiconductor technology ; 3179 ; 251-255
1996-01-01
5 pages
Also known as SSCs'96
Aufsatz (Konferenz)
Englisch
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Isotype heterojunction in HgCdTe photodiodes [3179-41]
British Library Conference Proceedings | 1996
|InAsSb heterojunction photodiodes grown by liquid phase epitaxy [3179-43]
British Library Conference Proceedings | 1996
|DataCite | 1906
HgCdTe focal plane arrays for high-performance infrared cameras (Invited Paper) [3179-38]
British Library Conference Proceedings | 1996
|Photoluminescence of GaAs grown by liquid phase epitaxy from Bi solution [3179-21]
British Library Conference Proceedings | 1996
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