Observation of the new lines in photoluminescence from MOCVD-grown GaAs [3179-24]
Symposium; 12th, Solid state crystals: materials science and applications: Solid state crystals in opteolectronics and semiconductor technology ; 1996 ; Zakopane; Poland
Solid state crystals: materials science and applications: Solid state crystals in opteolectronics and semiconductor technology ; 3179 ; 133-136
1996-01-01
4 pages
Also known as SSCs'96
Aufsatz (Konferenz)
Englisch
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Photoluminescence of GaAs grown by liquid phase epitaxy from Bi solution [3179-21]
British Library Conference Proceedings | 1996
|Photoreflectance and photoluminescence of InGaAs/GaAs structures [3179-22]
British Library Conference Proceedings | 1996
|DataCite | 1906
Optical properties of Zn~xMg~1~-~xSe/GaAs heterojunctions grown by MBE [3179-26]
British Library Conference Proceedings | 1996
|InAsSb heterojunction photodiodes grown by liquid phase epitaxy [3179-43]
British Library Conference Proceedings | 1996
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