Effects of stoichiometry in semi-insulating GaAs on optoelectronic devices [2897-539]
Meeting, Electro-optic and second harmonic generation materials, devices, and applications ; 1996 ; Beijing
1996-01-01
9 pages
Aufsatz (Konferenz)
Englisch
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DataCite | 1901
Modified vertical Bridgman technique for GaAs crystal growth [2897-599]
British Library Conference Proceedings | 1996
|Applications of optical crystals [2897-622]
British Library Conference Proceedings | 1996
|Optical model of electrochromic layers [2897-554]
British Library Conference Proceedings | 1996
|Research on solid electrochromic mirror [2897-553]
British Library Conference Proceedings | 1996
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